Bio

Hui-Lin Hsu is a PhD graduate in Electrical Engineering (Photonics) from the University of Toronto, with M.S. and B.S. degrees in Materials Science and Engineering from National Tsing Hua University, Taiwan. Her research interest is in the areas of thin film and nano-material processing, material characterizations, and microelectronic and photonic devices fabrication. Hui-Lin has completed four different research projects (Organic Thin Film Transistors (OTFTs), Flexible Carbon Nanotubes Electrodes for Neuronal Recording, Si Nanowire for Optical Waveguide Interconnection Application, and Rare Earth doped Amorphous Carbon Based Thin Films for Light Guiding/Amplifying Applications). Hui-Lin has also first authored 3 patents (1 in USA, 2 in Taiwan) and 5 SCI journal articles, co-authored 9 SCI journal articles, and 15 international conference presentations. She did internships at Taiwan Semiconductor Manufacturing Company (TSMC) and Industrial Technology Research Institute (ITRI). She is also a recipient of the 2008 scholarship for studying abroad from Taiwan government, and an invited participant for the 2007 Taiwan Semiconductor Young Talent Camp held by Applied Materials and 2015 ASML PhD master class.

Reduction in the Photoluminescence Quenching for Erbium-Doped Amorphous Carbon Photonic Materials by Deuteration and Fluorination

Reduction in the Photoluminescence Quenching for Erbium-Doped Amorphous Carbon Photonic Materials by Deuteration and Fluorination

The integration of photonic. materials into CMOS processing involves the use of new materials. A simple one-step metal-organic radio frequency plasma enhanced chemical vapor deposition system (RF-PEMOCVD) was deployed to grow erbium-doped amorphous carbon thin films (a-C:(Er)) on Si substrates at low temperatures (<200°C). A partially fluorinated metal-organic compound, tris(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate) Erbium(+III) or abbreviated Er(fod)3, was incorporated in situ into a-C based host. It was found that the prominent room-temperature photoluminescence (PL) signal at 1.54 µm observed from the a-C:H:F(Er) film is attributed to several factors including a high Er concentration, the large optical bandgap of the a-C:H host, and the decrease in the C-H quenching by partial C-F substitution of metal-organic ligand. In addition, six-fold enhancement of Er PL was demonstrated by deuteration of the a-C host. Also, the effect of RF power and substrate temperature on the PL of a-C:D:F(Er) films was investigated and analyzed in terms of the film structure. PL signal increases with increasing RF power, which is the result of an increase in [O]/[Er] ratio and the respective erbium-oxygen coordination number. Moreover, PL intensity decreases with increasing substrate temperature, which is attributed to an increased desorption rate or a lower sticking coefficient of the fluorinated fragments during film growth and hence [Er] decreases. In addition, it is observed that Er concentration quenching begins at ~2.2 at% and continues to increase until 5.5 at% in the studied a-C:D:F(Er) matrix. This technique provides the capability of doping Er in a vertically uniform profile.