Bio

Xi Ling is currently a Postdoctoral Associate in the Research Laboratory of Electronics at Massachusetts Institute of Technology (MIT) since September 2012, under the supervision of Professors Mildred Dresselhaus and Jing Kong. She obtained her PhD degree in physical chemistry from Peking University in July 2012, under the supervision of Professor Jin Zhang and Zhongfan Liu. She has a multidisciplinary background in chemistry, materials science, electrical engineering and physics, with research experience on spectroscopy, chemical vapor deposition (CVD) and optoelectronic devices.

Seeding Promoter Assisted Chemical Vapor Deposition of MoS2 Monolayer

Seeding Promoter Assisted Chemical Vapor Deposition of MoS2 Monolayer

The synthesis of monolayer MoS2-based dichalcogenides is an attractive topic because of their promising properties in diverse fields, especially in electronics and optoelectronic. Among the various methods to get the monolayer MoS2, the chemical vapor deposition (CVD) method is considered as the superlative one because of the high efficient, low cost and large-area synthesis. So far, sulfur and MoO3 are the widely used precursors to grow monolayer MoS2 on the SiO2/Si substrate. Here, by loading the organic aromatic molecule on the SiO2/Si substrate as seed, it was found that the large-area and high quality MoS2 can grow out under a much soft condition, such as atmospheric pressure, lowing the temperature from 800°C or higher to 650°C. Raman spectra, photoluminescence spectra and AFM (atomic force microscopy) are used to identify the thickness and quality of MoS2. Furthermore, other kinds of aromatic molecules are tried to use as a seed to grow MoS2. Towards the applications in integrated circuits, we developed a method called “selective sowing” of seeds to construct the basic building blocks of metal-semiconductor (e.g. graphene-MoS2), semiconductor-semiconductor (e.g. WS2-MoS2) and insulator-semiconductor (e.g. hBN-MoS2) heterostructures, through direct and controllable CVD synthesis in a large-scale.